Properties of Ta2 O 5‐Based Dielectric Nanolaminates Deposited by Atomic Layer Epitaxy

Abstract

Dielectric thin films and multilayers suitable for application as insulating layers in electroluminescent display devices have been studied. In this work, and nanolaminates with improved dielectric characteristics were grown by atomic layer epitaxy. The films were evaluated by capacitance and current‐voltage measurements, The pure , and films possessed charge‐storage factors up to 8, 16, and 19 nC/mm2, respectively, at a leakage current density of 1 μA/cm2. The nanolaminates were completely amorphous and their storage factors did not exceed 30 nC/mm2. The nanolaminates showed remarkably improved dielectric properties when compared with those of the pure oxide films, especially when the interlayer thicknesses were optimized. Nanosize crystallites of monoclinic and metastable tetragonal were observed in the nanolaminates by x‐ray diffraction. The nanolaminates possessed high charge‐storage factors up to 64 nC/mm2 and showed superior stability of the dielectric properties.