Halogen lamp recrystallization of silicon on insulating substrates

Abstract

Growth of large-area single-crystal silicon on an insulator is achieved by a zone melting technique using halogen lamps. The single-crystal, typically 3–4 mm by several centimeters, is composed of subgrains showing no internal defects, with boundaries parallel to the scan direction. The crystallographic orientation is (001) along the normal to the film plane and (100) along the scan direction.