High-quality GaInAsP/InP heterostructures grown by low-pressure metalorganic chemical vapor deposition on silicon substrates

Abstract

High-quality bulk InP and double heterostructure InP/GaInAsP/InP have been grown on silicon substrates by a low-pressure metalorganic chemical vapor deposition growth technique. X-ray diffraction patterns, as well as structural characterizations, indicate that the layers have very good crystalline quality. An intense photoluminescence signal from the quaternary alloy GaxIn1−xAsyP1−y has been recorded at room temperature, at the expected value of 1.3 μm.