Raman scattering of SiC: Estimation of the internal stress in 3C-SiC on Si

Abstract

Internal stress in 3C-silicon carbide (SiC) epilayers grown on Si substrates by chemical vapor deposition was studied using Raman scattering. The stress in the epilayers grown on Si(001) at 1350 °C was found to be 5.4×109 dyn/cm2 tensile, which is comparable to that of silicon on sapphire. The magnitude of the stress is discussed in terms of the elastic deformation theory. It was found that there is not so much difference between the stress in 3C-SiC epilayers grown on Si(001) and that in 3C-SiC on Si(111) as the elastic deformation theory suggests.