Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1986 · 35 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsSurface ScienceEpitaxial GrowthSemiconductor Crystal GrowthSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesSemiconductor Thin FilmsDark-field ImagingEpitaxial Film GrowthEpitaxial InterfacesEpitaxial MaterialsEpitaxial Thin-film GrowthHigh-resolution Electron MicroscopyMolecular Beam EpitaxyMolecular Beam Epitaxy Nucleation
Epitaxial CdTe grown on (100)GaAs by molecular beam epitaxy can be selectively oriented with two epitaxial arrangements—(111) CdTe//(100)GaAs and (100)CdTe//(100)GaAs. Under normal conditions to initiate growth, the consistent nucleation of (111)CdTe occurs on a clean, completely oxide-desorbed (100)GaAs substrate. The nucleation of (100)CdTe occurs by deliberately providing a ‘‘disturbance’’ to the (100)GaAs surface. Various growth techniques are described which provide the ‘‘disturbance’’ required to nucleate a (100)CdTe epilayer. High resolution electron microscopy and dark field imaging have been used to investigate the CdTe–GaAs interfaces for both epitaxial orientations.