Publication | Closed Access
Etch pits and dislocations in {100} GaAs wafers
25
Citations
9
References
1975
Year
Materials EngineeringMolten KohSemiconductor TechnologyEngineeringDislocation InteractionCrystalline DefectsPhysicsGaas WafersApplied PhysicsTransmission X-ray TopographyDefect FormationSemiconductor Device FabricationPlasma EtchingMicrostructure
The reliability of molten KOH for revealing dislocations intersecting {100} faces of GaAs has been tested using transmission x-ray topography. It is found to be a ’’faithful’’ etch.
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