Optical properties of low-pressure chemically vapor deposited silicon over the energy range 3.0–6.0 eV

Abstract

The optical properties of undoped and P-doped silicon prepared by low-pressure chemical vapor deposition were measured by spectroscopic ellipsometry over the energy range 3.0–6.0 eV. A marked effect of material microstructure is observed. Approximate values of the density deficit and of the volume fractions of crystalline and amorphous material are estimated as components of the microstructure by comparing measured spectra to those synthesized from constituent spectra in the Bruggeman effective-medium approximation.