Journal of Applied Physics · 1993 · 15 citations · 12 references
Natural SciencesMaterials EngineeringMaterials SciencePhysical ChemistrySurface ChemistrySurface ScienceSurface EnergeticsSurface KineticsSurface PassivationSurface PhysicsSurface Reaction KineticsSurface ReactionsActivation EnergyActivation Energy DeterminationBiasesDissociation BehaviorDissociation KineticsFirst-order KineticsReverse Bias CharacteristicsSurface Reaction Dynamics
The reactivation kinetics of hydrogen-passivated Mg acceptors in InP have been studied by annealing experiments carried out with different reverse biases. It is shown using a new analysis that the actual dissociation energy of the Mg-H complexes can be estimated even without applying a sufficient reverse bias to overcome retrapping of H at the dopant site. The dissociation process follows a first-order kinetics and the dissociation frequency and activation energy were estimated at various depths ranging from the surface up to 0.5 μm using an empirical analysis of the experimental data. A bias-independent dissociation energy of 1.40±0.08 eV was obtained when estimated at the surface. An apparently higher dissociation energy results when calculated in the bulk. This overestimation is pronounced for low-bias anneals and is explained as a result of retrapping. The concentration profile data is consistent with the positively charged state of the diffusing H in p-InP.
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Hydrogen in crystalline semiconductors
S. J. Pearton, J. W. Corbett, Tiansheng Shi · Applied Physics A · 1987 · 921 citations
Donor neutralization in GaAs(Si) by atomic hydrogen
J. Chevallier, W. C. Dautremont–Smith, C. W. Tu et al. · Applied Physics Letters · 1985 · 234 citations