Two-chip InGaAs-InP Fabry-Perot p-i-n receiver for WDM systems

Abstract

For the first time a two-chip wavelength-selective InGaAs-InP Fabry-Perot p-i-n receiver for dense wavelength-division-multiplexed systems is presented. This concept allows one to easily place the p-i-n diode outside the resonant cavity. A cavity length of more than 30 μm is applied to obtain a small optical bandwidth of the receiver. The device can be combined with micromachined actuators for wavelength tuning. First measurements of the receiver showed a full-width at half-maximum bandwidth of 0.6 nm and a finesse of 53. The overall losses of the receiver including fiber-to-chip coupling losses are 6.6 dB.