Influence of the Seed Face Polarity on the Sublimation Growth of α-SiC

Abstract

The influence of the face polarity of the seed crystal on the α-SiC sublimation growth has been investigated. Optical and electrical measurements were carried out for undoped and nitrogen-doped crystals grown on the (0001̄)C and the (0001)Si faces. The undoped crystal grown on the (0001̄)C face showed n -type conduction and high optical transmittance in the visible light region. In contract, the undoped crystal grown on the (0001)Si face was highly resistive p -type. It was dark in color and showed low optical transmittance. The differences between the two crystals are explained in terms of impurity incorporation during growth, which has different kinetics on the (0001̄)C and the (0001)Si faces.