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Nitrocellulose as a self-developing resist for focused ion beam lithography
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1988
Year
Materials ScienceEngineeringElectron-beam LithographyBeam LithographyMicrofabricationTarget FabricationSurface ScienceApplied PhysicsIrradiation TimeIon BeamFocused Ion BeamIon EmissionNanolithography MethodSelf-developing Resist
In order to obtain reproducibility of self-development of nitrocellulose, a method of controlling the focused ion beam by monitoring the absorption current was investigated. The change of the absorption current and the progress of self-development were observed as a function of the irradiation time of the focused ion beam, and an appropriate end point of irradiation by the ion beam was decided. Using this method, line patterns with a width of 160 nm were fabricated.