Nitrocellulose as a self-developing resist for focused ion beam lithography

H. Kaneko, Y. Yasuoka, Kenji Gamo, S. Namba

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1988 · 11 citations · 0 references

Concepts

Abstract

In order to obtain reproducibility of self-development of nitrocellulose, a method of controlling the focused ion beam by monitoring the absorption current was investigated. The change of the absorption current and the progress of self-development were observed as a function of the irradiation time of the focused ion beam, and an appropriate end point of irradiation by the ion beam was decided. Using this method, line patterns with a width of 160 nm were fabricated.