Analysis of trapping effects on charge transfer in proton irradiated pn-CCDs

Defect production and lifetime control in electron and γ-irradiated silicon

S. D. Brotherton, Peter D. Bradley · Journal of Applied Physics · 1982 · 305 citations

Engineering, Electrical Engineering, Materials Science +17

Properties of 1.0-MeV-Electron-Irradiated Defect Centers in Silicon

John W. Walker, C. T. Sah · Physical review. B, Solid state · 1973 · 125 citations

Engineering, Materials Engineering, Materials Science +17

The effects of bulk traps on the performance of bulk channel charge-coupled devices

A.M. Mohsen, M.F. Tompsett · IEEE Transactions on Electron Devices · 1974 · 111 citations

Engineering, Electrical Engineering, Condensed Matter Physics +16

The MPI/AIT X-ray imager (MAXI) — High speed pn CCDs for X-ray detection

L. Strüder, H. Bräuninger, M. Meier et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 1990 · 77 citations

Natural Sciences, Astronomy, Radiation Detection +8

The effect of bulk traps in proton irradiated EEV CCDs

Andrew D. Holland · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 1993 · 56 citations

Natural Sciences, Nuclear Engineering, Physics +10