Self‐organized growth of InN‐nanocolumns on p‐Si(111) by MBE

Abstract

Abstract InN‐nanocolumns are an attractive system for light harvesting applications. To understand the mechanism of self organized growth of nanocolumns in plasma assisted MBE, InN samples were produced under various conditions on p‐Si(111). Depending on the growth parameters different growth regimes for nanocolumns were identified according to their final shape. High‐resolution TEM pictures show a very good crystal quality. This is also confirmed by Raman and PL measurements. Nanocolumns with diameters of 20‐200 nm and lengths of up to 2 mm were produced. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)