Two-dimensional simulation of local oxidation of silicon: calibrated viscoelastic flow analysis

Abstract

Local Oxidation of Silicon (LOCOS) remains the common isolation technology for mass-production of integrated circuits. The work reported in this paper contributes to the improvement of the numerical modeling of the LOCOS process. A physical two-dimensional (2-D) modeling of the thermal oxidation of silicon has been developed based on the explicit treatment of the reaction expansion. The originality of this modeling is to propose a general solution taking into account of the silicon deformation, incorporating the viscoelastic behaviour of oxide and nitride and, particularly, giving a complete calibration of the stress-dependent parameters. The prediction capabilities are demonstrated by the calculations of oxide shapes and oxidation-induced stresses in a silicon substrate for very advanced isolation techniques.