The temperature dependence of the photoconductivity of n-type a-Si:H and the effect of staebler-wronski defects

Reversible conductivity changes in discharge-produced amorphous Si

D. L. Staebler, C. R. Wroński · Applied Physics Letters · 1977 · 2.9K citations

Natural Sciences, Materials Science, Physics +17

Recombination processes in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>a</mml:mi></mml:math>-Si:H: Spin-dependent photoconductivity

H. Dersch, L. Schweitzer, J. Stuke · Physical review. B, Condensed matter · 1983 · 234 citations

Natural Sciences, Materials Science, Physics +14

Photoconductivity and photoluminescence of a-Si:H at low temperature

M. Hoheisel, R. Carius, W. Fuhs · Journal of Non-Crystalline Solids · 1984 · 50 citations

Engineering, Materials Engineering, Materials Science +12

Transient photoconductivity in n-type a-Si: H

C. Main, Robert John Russell, J. Berkin et al. · Philosophical Magazine Letters · 1987 · 36 citations

Engineering, Materials Science, Physics +17

Recombination of trapped carriers in a-Si:H probed by subbandgap excitation

W. Fuhs · Journal of Non-Crystalline Solids · 1985 · 26 citations

Natural Sciences, Materials Science, Physics +14