Electronics Letters · 1969 · 15 citations · 0 references
EngineeringElectrical EngineeringPhysicsElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDevice ModelingElectrical ConductivityMetal-semiconductor ContactsMetalsSemiconductor Device MaterialsSemiconductor InterfacesActivation EnergyActivation Energy DeterminationContact ResistanceContact Resistance EffectsContact Resistance MeasurementGunn DiodesTemperature Dependence Of DiodesTemperature Dependence Of Resistance
Two different sets of experiments on the effect of temperature on Gunn diodes with Ag-Sn metal contacts have indicated the presence of a contact resistance which can be characterised by an activation energy. A model based on the diffusion of copper into the active region is put forward to account for the origin of the contact resistance and its variation with temperature.