Effect of Atomic Layer Epitaxy Growth Conditions on the Properties of ZnS Epilayers on (100)-Si Substrate

Abstract

ZnS films have been grown on (100)-Si substrate in atomic layer epitaxy (ALE) mode using DMZn and H2S as source materials. The growth rate was 0.7 monolayer per cycle, independent of substrate temperature in the range 125° C to 225° C. Under optimum growth conditions, ZnS layers grown in ALE mode showed good surface morphology. In photoluminescence (PL) spectra, a sharp peak at 337 nm was observed at room temperature, which was attributed to band-to-band emission.