Journal of Applied Physics · 1977 · 69 citations · 15 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsDopingOptoelectronic DevicesOptoelectronic MaterialsP-n JunctionsQuantum OptoelectronicsSemiconductor Device MaterialsElectroluminescenceExternal Quantum EfficiencyForward Bias CharacteristicsIon Implantation EffectsLight-emitting DevicesQuantum Efficiency
ZnSe p-n junction diodes have been formed by nitrogen ion implantation. MIS diodes have also been made using a film of ZnSe oxidized in H2O2 solution for the insulator layer. Blue electroluminescence has been observed from both the diodes in forward bias at room temperature. The external quantum efficiency is about 10−5. The emission may originate from a bound exciton.
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Optical Properties of Substitutional Donors in ZnSe
J. L. Merz, Hiroshi Kukimoto, K. Nassau et al. · Physical review. B, Solid state · 1972 · 301 citations
Pair Spectra and the Shallow Acceptors in ZnSe
J. L. Merz, K. Nassau, J.W. Shiever · Physical review. B, Solid state · 1973 · 211 citations
Pair Spectra and "Edge Emission" in Zinc Selenide
P. Dean, J. L. Merz · Physical Review · 1969 · 201 citations