Publication | Closed Access
In situ measurements of wafer bending curvature during growth of group-III-nitride layers on silicon by molecular beam epitaxy
19
Citations
8
References
2007
Year
Materials ScienceEngineeringSurface ScienceApplied PhysicsMultilayer HeterostructuresSemiconductor Device FabricationMolecular Beam EpitaxySilicon On InsulatorEpitaxial GrowthWafer Bending CurvatureGroup-iii-nitride Layers
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