A simple method of calculating the minority-carrier current in heavily doped silicon

Physics of Semiconductor Devices

Geoffrey Pridham · Electronics and Power · 1970 · 4K citations

Engineering, Electrical Engineering, Physics +12

<i>Advances in Electronics and Electron Physics</i>

L. Marton, Robert L. Sproull · Physics Today · 1960 · 1.8K citations

Natural Sciences, Electrical Engineering, Physics +13

Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon

G. Masetti, M. Severi, S. Solmi · IEEE Transactions on Electron Devices · 1983 · 956 citations

Engineering, Electrical Engineering, Materials Science +17

Measurements of bandgap narrowing in Si bipolar transistors

J.W. Slotboom, H.C. de Graaff · Solid-State Electronics · 1976 · 752 citations

Engineering, Electrical Engineering, Physics +13

A Charge Control Relation for Bipolar Transistors

H.K. Gummel · Bell System Technical Journal · 1970 · 172 citations

Engineering, Electrical Engineering, Circuit Theory +10