3D-stackable crossbar resistive memory based on Field Assisted Superlinear Threshold (FAST) selector

Abstract

We report the integration of 3D-stackable 1S1R passive crossbar RRAM arrays utilizing a Field Assisted Superlinear Threshold (FAST) selector. The sneak path issue in crossbar memory integration has been solved using the highest reported selectivity of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</sup> . Excellent selector performance is presented such as extremely sharp switching slope of < 5mV/dec., selectivity of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</sup> , sub-50ns operations, > 100M endurance and processing temperature less than 300°C. Measurements on the 4Mb 1S1R crossbar array show that the sneak current is suppressed below 0.1nA, while maintaining 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> memory on/off ratio and > 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> selectivity during cycling, enabling high density memory applications.