GaAs integrated circuits by selected-area molecular beam epitaxy

Abstract

Working GaAs integratted logic elements have been fabricated using selected-area molecular beam epitaxy. Thermally grown native oxides ∼250 Å thick have been used to define regions of single-crystalline device-quality GaAs in a matrix of semi-insulating polycrystalline GaAs. The planarity of this process and the inherent resistivity of the polycrystalline GaAs ( ρ≳105 Ω cm) have been used in the fabrication of working NAND and NOR logic gates (Schottky diode/field-effect transistor logic).