Point defect injection into silicon due to low-temperature surface modifications

Abstract

Deep level transient spectroscopy has been applied to study the appearance of phosphorus-vacancy pairs in n-type silicon following different low-temperature surface modifications. It is established that at most 107 cm−2 vacancy is injected into the bulk of the silicon substrate during Pd2Si silicide formation. On the other hand, phosphorus-vacancies pairs are observed after electron irradiation, low energy ion bombardment, and electron gun evaporation of metal films.