Applied Physics Letters · 1994 · 31 citations · 18 references
Natural SciencesMaterials EngineeringMaterials ScienceNanomaterialsNanotechnologySemiconductor MaterialsLuminescent MaterialsNanoporous MaterialsOptical Properties Of SemiconductorsPorous MaterialsSemiconductor NanomaterialsSilicon MaterialsBand Gap EnergyCharge-coupled Device DetectionNanostructure CharacterizationNanostructured SiliconPhotoluminescencePhotoluminescence SpectroscopyPorous SiliconSilicon Nanostructures
Time-dependent change in the visible luminescence of porous Si immersed in HF aqueous solution was measured in a short acquisition time (5 s) with a charge coupled device detector. Under Ar+ laser light (514.5 nm) irradiation, the photoluminescence band of the porous Si shifted to shorter wavelength accompanying a reduction of the peak intensity. The result suggests that the size of the Si nanostructure is closely related to the gap energy of the porous Si.
18
Porous silicon formation: A quantum wire effect
V. Lehmann, U. Gösele · Applied Physics Letters · 1991 · 1.9K citations
Natural Sciences, Materials Engineering, Materials Science +17
Porous silicon formation mechanisms
R. L. Smith, Scott D. Collins · Journal of Applied Physics · 1992 · 1.2K citations