Japanese Journal of Applied Physics · 1983 · 12 citations · 7 references
EngineeringCrystal Growth TechnologyZnte SubstratePhotovoltaicsSemiconductorsIi-vi SemiconductorSolar Cell StructuresMolecular Beam EpitaxyEpitaxial GrowthCompound SemiconductorMaterials ScienceMaterials EngineeringLiquid-phase Epitaxial GrowthLpe GrowthZnte SubstratesApplied PhysicsThin FilmsSolar CellsChemical Vapor DepositionSolar Cell Materials
Epitaxial layers of ZnSe were grown on ZnTe substrates using a liquid-phase epitaxial growth (LPE) method. A presynthesized Te–Se solution was used as a solvent for LPE. Growth was done in an evacuated quartz tube by a tipping method. The Zn–Se–Te ternary phase diagram was also determined in order to take the basic data of the LPE growth. The ZnSe/ZnTe heterostructure showed fairly good photovoltaic properties. The open-circuit voltage was 0.9 V and the ZnSe epilayer was effective as a window material of the solar cell.
7