Japanese Journal of Applied Physics · 1981 · 17 citations · 12 references
Materials ScienceMaterials EngineeringChemical EngineeringOptical MaterialsLiquid-phase Epitaxial GrowthEngineeringIi-vi SemiconductorEpitaxial GrowthNanotechnologyCrystal Growth TechnologySurface ScienceZns SubstratesChemistryThin FilmsMixed CompoundsMolecular Beam EpitaxyDeep Eutectic SolventCompound Semiconductor
Epitaxial layers of ZnS, ZnSe and their mixed compounds were grown on ZnS substrates by the liquid-phase epitaxial growth (LPE) method using Te as the solvent. The open-tube slide-boat technique was used, and a suitable starting temperature for growth was found to be 850°C for ZnS and 700–800°C for ZnSe. The ZnS epitaxial layers grown on {111}A and {111}B oriented ZnS substrates were thin (∼1 µm) and smooth, had low, uniform Te concentrations (∼0.1 at.%) and were highly luminescent. The ZnSe epitaxial layers were relatively thick (10–30 µm) and had fairly high Te concentrations (a few at.%). Various mixed compound ZnS 1- x Se x were also grown on ZnS substrates.
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