Japanese Journal of Applied Physics · 1980 · 28 citations · 5 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsSurface ScienceImplant MaterialsIon ImplantationOxide SemiconductorsSemiconductor Device MaterialsSemiconductor SurfacesSilicon MaterialsChemical PropertiesDose-rate EffectsIon Implantation EffectsOxide Layer EngineeringPolycrystalline SiliconSilicon AnnealingSilicon DioxideSilicon Wafers
Depth distributions of crystallographic and chemical properties in oxygen ion-implanted Si layers have been studied by TEM, AES and XPS. Oxygen ions ( 16 O + ) were implanted into (100)-Si wafers at 150 keV to a dose of 1.2×10 18 /cm 2 . The dose rate was about 15 µA/cm 2 . The implanted oxygen forms a buried SiO 2 layer after annealing. The Si layer on this buried SiO 2 layer is not completely amorphized by implantation, and changes after annealing to a single crystal Si layer at the surface region and a deeper polycrystalline Si layer. A twin layer is formed at the interface region between these two layers. The polycrystalline Si layer consists of a mixture of Si and SiO 2 .
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