Photoluminescence property of InGaN single quantum well with embedded AlGaN δ layer

Abstract

We investigate the photoluminescence (PL) properties of a thick InGaN single quantum well (SQW) in which an AlGaN δ layer is embedded. The δ layer offers an extra degree of freedom which may be employed to tune the emission wavelength. One of the most salient features of such a QW structure is that the long-wavelength tuning is feasible with lower indium composition. The δ layer also increases the wave function overlap between holes and electrons, shortening the PL lifetime. All the measurement results are consistent with the numerical predictions. The QW structure could be of great importance in the design of long-wavelength lasers.