Thickness Dependence of Mobility in Pentacene Thin‐Film Transistors

Ricardo Ruiz, Alexios Papadimitratos, Alex C. Mayer, George G. Malliaras

Advanced Materials · 2005 · 317 citations · 30 references

Concepts

Abstract

The field-effect mobility of pentacene transistors saturates when six monolayers of pentacene are deposited on the gate dielectric. This saturation is not caused by the formation of islands, as the early stages of growth have been found to take place in a layer-by-layer fashion, and layer completion continues well past six monolayers (see Figure).

References

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