Effects of Hartree, exchange, and correlation energy on intersubband transitions

Abstract

We calculate the effects of the Hartree and the exchange-correlation potential on the subband levels of a doped GaAs/AlxGa1−xAs quantum well within the local density approximation. The intersubband transition energy appropriate to infrared detectors is calculated including both exciton and depolarization shifts. These effects are all known to be very important in the Si inversion layer and are shown here to be significant for the intersubband transitions in doped quantum wells. The effects of an applied electric field on these energy levels is explicitly included in the calculation. The Hartree potential is shown to effectively screen the electric field significantly reducing the Stark effect.