Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1986 · 16 citations · 0 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsDislocations In SemiconductorsElectronic Band StructureSemiconductor Crystal GrowthSemiconductor HeterostructuresSemiconductor PhysicsWide Band Gap SemiconductorsBuffer LayersDislocationsLattice MisfitLattice MismatchMisfit DislocationsMolecular Beam EpitaxySuperlattice GrowthSuperlattices
HgTe–CdTe superlattices were grown by molecular beam epitaxy on GaAs(100) substrates with CdTe buffer layers. The large (14.6%) lattice mismatch between CdTe and GaAs is relieved by a two-dimensional array of misfit dislocations with a period of 3.1 nm. X-ray diffraction, infrared transmittance, and Hall effect measurements are reported for thick (>5 μm) single crystalline superlattices.