Influence of the additives argon, O2, C4F8, H2, N2 and CO on plasma conditions and process results during the etch of SiCOH in CF4 plasma - Concepedia

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Influence of the additives argon, O2, C4F8, H2, N2 and CO on plasma conditions and process results during the etch of SiCOH in CF4 plasma

16

Citations

13

References

2010

Year

Sven Zimmermann, Nicole Ahner, F. Blaschta, Henrik Zimmermann, H. Rülke, Norbert Lang, J. Röpcke, Stefan E. Schulz

Microelectronic Engineering

Chemical EngineeringPlasma ConditionsPlasma CombustionCf4 PlasmaChemistryGas Discharge PlasmaNonthermal PlasmaPlasma ProcessingProcess Results

References

	Year	Citations

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