Estimation of impurity profiles in ion-implanted amorphous targets using joined half-Gaussian distributions

Abstract

A probability distribution function appropriate for nonsymmetrical impurity distributions in ion-implanted targets is defined to consist of two half-Gaussian distributions that join at a modal projected range RM. For projected distances Xp<Rm the distribution has standard deviation σ1, while for Xp>Rm the distribution has standard deviation σ2. For appropriate choices of RM, σ1, and σ2, the proposed distribution is found to provide an extremely good fit for experimental impurity profiles.