Publication | Open Access
Resonant Light Delay in GaN with Ballistic and Diffusive Propagation
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Citations
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References
2008
Year
Wide-bandgap SemiconductorPhotonicsElectrical EngineeringQuantum PhotonicsEngineeringPhotoluminescencePhysicsOptical PropertiesApplied PhysicsGan Power DeviceBulk GanResonant Light DelayPhoton EnergyOptoelectronicsCategoryiii-v SemiconductorStrong Delay
We report on a strong delay in light propagation through bulk GaN, detected by time-of-flight spectroscopy. The delay increases resonantly as the photon energy approaches the energy of a neutral-donor bound exciton (BX), resulting in a velocity of light as low as 2100 km/s. In the close vicinity of the BX resonance, the transmitted light contains both ballistic and diffusive components. This phenomenon is quantitatively explained in terms of optical dispersion in a medium where resonant light scattering by the BX resonance takes place in addition to the polariton propagation.
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