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Response to “Comment on ‘Ground state exciton lasing in CdSe submonolayers inserted in a ZnSe matrix’ ” [Appl. Phys. Lett. <b>70</b>, 2765 (1997)]

N. N. Ledentsov, I. L. Krestnikov, M. V. Maximov, S. V. Ivanov, Sergey Sorokin, P. S. Kop’ev, Zh. I. Alfërov, D. Bimberg

Applied Physics Letters · 1997 · 31 citations · 4 references

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Initial stages of InAs epitaxy on vicinal GaAs(001)-(2×4)

V. Bressler-Hill, A. Lorke, Shikha Varma et al. · Physical review. B, Condensed matter · 1994 · 143 citations

, , +17

Ground state exciton lasing in CdSe submonolayers inserted in a ZnSe matrix

N. N. Ledentsov, I. L. Krestnikov, M. V. Maximov et al. · Applied Physics Letters · 1996 · 89 citations

, , +17

Energy levels and exciton oscillator strength in submonolayer InAs-GaAs heterostructures

M. V. Belousov, N. N. Ledentsov, M. V. Maximov et al. · Physical review. B, Condensed matter · 1995 · 61 citations

, , +17

Optical spectroscopic studies of InAs layer transformation on GaAs surfaces

N. N. Ledentsov, P. D. Wang, A. Yu. Egorov et al. · Physical review. B, Condensed matter · 1994 · 52 citations

, , +17