Development of a new heterojunction structure (ACJ ‐HIT) and its application to polycrystalline silicon solar cells

Abstract

Abstract A new solar cell structure named HIT (Heterojunction with Intrinsic Thin layer) has been developed based on new artificially constructed junction (ACJ) technology. In this structure a non‐doped a‐Si thin layer was inserted between the p(a‐Si)/n(c‐Si) heterojunction, improving the output characteristics and achieving a conversion efficiency of 18.1%. This structure was applied to cast polycrystalline silicon solar cells of a practical size. A high conversion efficeincy of 13.6% was obtained with a cell size of 10 cm × 10 cm using various technologies, including hydrogen plasma passivation.