Nucleation and growth during molecular beam epitaxy (MBE) of Si on Si(111)

Scanning tunneling microscopy

G. Binnig, H. Rohrer · Surface Science · 1983 · 937 citations

A new LEED instrument for quantitative spot profile analysis

Uwe Scheithauer, Gerd Meyer, M. Henzler · Surface Science · 1986 · 299 citations · Full text

Engineering, Geophysics, Instrumentation +3

The (7 × 7) ↔ (1 × 1) phase transition on Si(111)

W. Telieps, E. Bauer · Surface Science · 1985 · 270 citations

Natural Sciences, Materials Science, Physics +12

Reflection electron microscopy of clean and gold deposited (111) silicon surfaces

Nobuyuki Osakabe, Y. Tanishiro, K. Yagi et al. · Surface Science · 1980 · 242 citations

Natural Sciences, Materials Engineering, Materials Science +12

Intensity oscillations of reflection high-energy electron diffraction during silicon molecular beam epitaxial growth

T. Sakamoto, N. Kawai, Tadashi Nakagawa et al. · Applied Physics Letters · 1985 · 211 citations

Natural Sciences, Materials Engineering, Materials Science +17