7.4 Gbit/s monolithically integrated GaAs/AlGaAs laser diode-laser driver structure

Abstract

A molecular beam epitaxy (MBE) grown (GaAs/AlGaAs multi-quantum well laser, monolithically integrated with a laser driver, was realised on 2 inch GaAs substrate wafers. In an optical data communication setup, performance up to data rates of 7.4 Gbit/s was demonstrated.