Spin-polarized current induced switching in Co/Cu/Co pillars

TLDR

The study demonstrates current‑driven magnetization reversal and control of magnetic configuration in pillar‑shaped Co/Cu/Co trilayers. Pillars (200×600 nm²) were fabricated by electron‑beam lithography and reactive‑ion etching, and the data were interpreted using a Slonczewski model with Valet–Fert current‑polarization calculations for perpendicular‑to‑plane current. Measured threshold currents for magnetization reversal agree with previous results on similar Co/Cu/Co pillars.

Abstract

We present experiments of magnetization reversal by spin injection performed on pillar-shaped Co/Cu/Co trilayers. The pillars (200×600 nm2) are fabricated by electron beam lithography and reactive ion etching. Our data for the magnetization reversal at a threshold current confirm previous results on similar pillars. In addition, we present another type of experiment that also clearly evidences the control of the magnetic configuration by the current intensity. Our interpretation is based on a version of the Slonczewski model in which the polarization of the current is calculated in the Valet–Fert model of the giant magnetoresistance with current applied perpendicular to plane.