Japanese Journal of Applied Physics · 2011 · 19 citations · 7 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsOptoelectronicsSemiconductor DevicesCmos Circuit DesignField-effect TransistorsIntegrated Circuit DesignIntegrated Circuit DevicesMetal-oxide-semiconductor Field-effect TransistorsOptoelectronic DevicesActive Load ControlActive Load DesignDisplay ApplicationsLight-emitting Diode CircuitsMetal-semiconductor Field-effect TransistorsOrganic Field-effect TransistorsOrganic Light-emitting DiodesSource Follower Stages
In this paper, we propose a pixel circuit immune to the electrical characteristic variation of organic light-emitting diodes (OLEDs) for organic light-emitting diode-on-silicon (OLEDoS) microdisplays with a 0.4 inch video graphics array (VGA) resolution and a 6-bit gray scale. The proposed pixel circuit is implemented using five p-channel metal oxide semiconductor field-effect transistors (MOSFETs) and one storage capacitor. The proposed pixel circuit has a source follower with a diode-connected transistor as an active load for improving the immunity against the electrical characteristic variation of OLEDs. The deviation in the measured emission current ranges from -0.165 to 0.212 least significant bit (LSB) among 11 samples while the anode voltage of OLED is 0 V. Also, the deviation in the measured emission current ranges from -0.262 to 0.272 LSB in pixel samples, while the anode voltage of OLED varies from 0 to 2.5 V owing to the electrical characteristic variation of OLEDs.
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