Pixel Circuit for Organic Light-Emitting Diode-on-Silicon Microdisplays Using the Source Follower Structure

Abstract

In this paper, we propose a new pixel circuit for organic light-emitting diode-on-silicon (OLEDoS) microdisplays. The proposed pixel circuit is composed of only two metal oxide semiconductor field-effect transistors (MOSFETs) and one capacitor in order to integrate the pixel circuit into the restricted pixel area (12.6×4.2 µm 2 ). The proposed pixel circuit has a source follower structure that can control an extremely low emission current. The measured results show that the maximum deviation in the emission current of the proposed pixel circuit occurs at the highest gray level of 6 bits. The deviations in the measured emission current range from -0.9 least significant bit (LSB) to +1.0 LSB among 8 pixels.