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High sensitivity Hall elements made from Si-doped InAs on GaAs substrates by molecular beam epitaxy

T. Iwabuchi, Takashi Ito, Masaki Yamamoto, Kentaro Sako, Yuichi Kanayama, Kazuhiro Nagase, Takashi Yoshida, Fumiaki Ichimori, Ichiro Shibasaki

Journal of Crystal Growth · 1995 · 25 citations · 0 references

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