Laser microreaction for deposition of doped silicon films

Abstract

An Ar-ion laser has been used to activate surface pyrolytic deposition of polycrystalline Si in a several micrometer reaction zone. Controlled doping with boron during deposition allows one-step direct writing of highly conducting Si lines with linewidths as small as 1 μm. An unexpectedly fast deposition rate is associated with changes in the reaction kinetics as the dimensions of the reaction volume are reduced to microscopic lengths.