Cross-sectional TEM study of microstructures in MOVPE GaN films grown on α-Al2O3 with a buffer layer of AlN - Concepedia

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Cross-sectional TEM study of microstructures in MOVPE GaN films grown on α-Al2O3 with a buffer layer of AlN

44

Citations

10

References

1991

Year

Noriyuki Kuwano, T. Shiraishi, Akihiro Koga, K. Oki, Kazumasa Hiramatsu, Hiroshi Amano, Kenji Itoh, Isamu Akasaki

Journal of Crystal Growth

Materials ScienceAluminium NitrideMovpe Gan FilmsEngineeringBuffer LayerApplied PhysicsAluminum Gallium NitrideGan Power DeviceCross-sectional Tem StudyThin Films

References

	Year	Citations

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