Cross-sectional TEM study of microstructures in MOVPE GaN films grown on α-Al2O3 with a buffer layer of AlN

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

Isamu Akasaki, Hiroshi Amano, Yasuo Koide et al. · Journal of Crystal Growth · 1989 · 688 citations

Engineering, Materials Engineering, Materials Science +13

Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE

K. Hiramatsu, Shintaro Itoh, Hiroshi Amano et al. · Journal of Crystal Growth · 1991 · 296 citations

Engineering, Materials Engineering, Materials Science +12

Energy band-gap bowing parameter in an Al<i>x</i>Ga1−<i>x</i> N alloy

Yasuo Koide, H. Itoh, Mohammad Rezaul Huque Khan et al. · Journal of Applied Physics · 1987 · 205 citations

Natural Sciences, Materials Science, Physics +17

Substrate-orientation dependence of GaN single-crystal films grown by metalorganic vapor-phase epitaxy

Toru Sasaki, Sakae Zembutsu · Journal of Applied Physics · 1987 · 179 citations

Engineering, Materials Engineering, Materials Science +17

Properties of Zn-doped GaN. I. Photoluminescence

J. I. Pánkové, J. E. Berkeyheiser, Edward A. Miller · Journal of Applied Physics · 1974 · 105 citations

Engineering, Materials Engineering, Materials Science +17