IEEE Journal of Solid-State Circuits · 2007 · 55 citations · 15 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesDifferential AmplifiersHigh-frequency Semiconductor DevicesMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsBandwidthBandwidth MeasurementBipolar TechnologyDifferential GainGain BandwidthGain-bandwidth ProductMicrowave Amplifier CharacterizationWideband Amplifiers
This paper reports on the design, fabrication, and characterization of a lumped broadband amplifier in SiGe bipolar technology. The measured differential gain is 20 dB with a 3-dB bandwidth of more than 84 GHz, which is the highest bandwidth reported so far for broadband SiGe bipolar amplifiers. The resulting gain bandwidth product (GBW) is more than 840 GHz. The amplifier consumes a power of 990 mW at a supply of -5.5 V.
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Analysis and Design of Analog Integrated Circuits
W.R. Betts · Electronics and Power · 1978 · 3.8K citations
Timothy O. Dickson, K.H.K. Yau, T. Chalvatzis et al. · IEEE Journal of Solid-State Circuits · 2006 · 201 citations
Engineering, Computer Engineering, Electrical Engineering +17
SiGe bipolar technology for automotive radar applications
J. Böck, Hans‐Wilhelm Schiffer, K. Auflnger et al. · 2004 · 164 citations
Engineering, Automotive Engineering, Electrical Engineering +14