Publication | Closed Access
Magnitude and Origin of the Band Gap in NiO
923
Citations
16
References
1984
Year
Ii-vi SemiconductorTransition Metal ChalcogenidesEngineeringPhysicsBand-theory PredictionsNatural SciencesOxide ElectronicsCondensed Matter PhysicsQuantum MaterialsApplied PhysicsChemistryQuantum ChemistryCluster-theory PredictionsElectronic StructureCrystallographySpectroscopic PropertyBand Gap
Photoemission and bremsstrahlung-isochromat-spectroscopy data on a cleaved NiO single crystal are presented and compared to band- and cluster-theory predictions. In contrast to band-theory predictions the band gap is found to be large but not determined solely by the even larger $d\ensuremath{-}d$ Coulomb interactions so that NiO is not a Mott-Hubbard insulator in the simplest sense. A large $d\ensuremath{-}d$ interaction need not prevent NiS from being a metal.
| Year | Citations | |
|---|---|---|
1963 | 6.5K | |
1959 | 2.5K | |
1949 | 1.9K | |
1981 | 835 | |
1984 | 660 | |
1970 | 507 | |
1984 | 274 | |
1984 | 240 | |
1979 | 167 | |
1982 | 153 |
Page 1
Page 1