Optimization of High-Efficiency n<sup>+</sup>-p-p<sup>+</sup> Back-Surface-Field Silicon Solar Cells

Keiichi Morita, Tadashi Saitoh, Tsuyoshi Uematsu, Yasuhiro Kida, Shigeru Kokunai, Kunihiro Matsukuma

Japanese Journal of Applied Physics · 1987 · 33 citations · 3 references

Concepts

Abstract

High-efficiency silicon solar cells are fabricated with back-surface-field (BSF) structures using medium-resistivity, float-zone substrates. The cell processes are optimized using a new BSF process in order to maintain a high minority-carrier lifetime. In addition, they are improved with a passivated, V-grooved surface to enhance collection efficiency. The resultant cells exhibit conversion efficiencies of 19.1% with a short-circuit current density of 38.4 mA/cm 2 . The minority-carrier lifetime and surface recombination velocity are estimated to be 341 µs and 3×10 5 cm/s using a computer program.

References

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