The influence of ion implantation on the thermal oxidation of copper

Abstract

The effect of 31 species of ion implanted impurities on the thermal oxidation of polycrystalline copper, and nine implanted species on the oxidation of single crystal (110) copper is studied. The majority of these increased the oxidation resistance of the copper, the greatest effect on oxidation being caused by chromium (88% decrease), platinum, and hafnium. An increase in the degree of oxidation is found with increasing ionic radius of the implanted species. A drastic (174%) increase in the oxidation induced by vanadium implantation is associated with changes in the morphology of the oxide. The results generally support a model based on the formation of a p–n junction in the implanted oxide.