Physical Review Letters · 2004 · 96 citations · 23 references
EngineeringChemistryMaterials ScienceCondensed Matter PhysicsInterface ScienceSemiconductor MaterialsCarrier TransportOrganic Electronic MaterialsOrganic SemiconductorsSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesCharge Carrier DensityCharge Distribution At InterfacesCharge InjectionCharge Transport MechanismsInterface Charge TransportInterfacial Charge DensityThermionic EmissionTransport In Semiconductors
We have measured the chemical potential and capacitance in a disordered organic semiconductor by electric force microscopy, following the electric field and interfacial charge density microscopically as the semiconductor undergoes a transition from Ohmic to space-charge limited conduction. Electric field and charge density at the metal-organic interface are inferred from the chemical potential and current. The charge density at this interface increases with electric field much faster than is predicted by the standard diffusion-limited thermionic emission theories.
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