Resistive contrast imaging: A new SEM mode for failure analysis

Abstract

Semiconductor device path resistance is obtained from scanning electron microscope (SEM) images using a modified electron-beam-induced current (EBIC) mode. We call this new method resistance contrast imaging (RCI). The intensity of these images is proportional to internal device resistance ratios. Applications of the RCI method to device failure analysis are presented. This method is non-destructive and applicable to passivated devices.